Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method

ABSTRACT

A functional film which is applied to a surface of a base material includes a film of Ti-doped tetrahedral amorphous carbon (ta-C:Ti film).

CROSS-REFERENCE TO RELATED APPLICATION

This application is a non-provisional application claiming priority toand the benefit of U.S. provisional application No. 61/755,098, filed onJan. 22, 2013. The entire contents of which are incorporated herein byreference.

BACKGROUND

1. Field of the Invention

The present invention relates to a functional film, a liquid immersionmember, a method of manufacturing a liquid immersion member, an exposureapparatus, and a device manufacturing method. More specifically, thepresent invention relates to a functional film having a surface propertywith both hydrophilic and antifouling properties, to a liquid immersionmember using the functional film, to a method of manufacturing a liquidimmersion member, to an exposure apparatus, and to a devicemanufacturing method.

2. Description of Related Art

In exposure apparatuses used in a photolithography process, a liquidimmersion exposure apparatus that exposes a substrate with exposurelight through liquid is known, for example, as disclosed in UnitedStates Patent Application, Publication No. 2008/266533 and United StatesPatent Application, Publication No. 2005/018155.

SUMMARY

In liquid immersion exposure apparatuses, components contained in aresist or a topcoat on the surface of a wafer which is a substrate maybe eluted into liquid (pure water) in a state where a liquid immersionregion is formed on an object such as a substrate. For this reason,there is the possibility of resist or topcoat components eluted intoliquid (pure water) being reprecipitated on the surface of a memberhaving the liquid immersion region formed therein, and the precipitatesbeing peeled off by a water flow (liquid flow) and being attached to thesubstrate. When the substrate is exposed in a state where theprecipitates are attached to the substrate, there is the possibility ofexposure defects (such as, for example, a pattern defect formed on thesubstrate) and a defective device. Further, foreign substances mixedinto liquid for any reason are attached to the member having the liquidimmersion region formed therein, and thus the substrate may be exposedin a state where the attached foreign substances are mixed into theliquid again.

For this reason, it is necessary to periodically clean the member havingthe liquid immersion region formed therein, and to remove theprecipitates on the surface, but an increase in the cleaning time andfrequency can lead to productivity deterioration.

In addition, in order to hold liquid immersion water, the surface of themember having the liquid immersion region formed therein is required tohave a hydrophilic property. Further, it is required that the surface ofthe member as unlikely as possible to be contaminated. That is, asurface property with both hydrophilic and antifouling properties isrequired for the member which is mounted in the exposure apparatus andhas the liquid immersion region formed therein. Hitherto, functionalfilms having such surface properties have been not present.

An object of an aspect of the present invention is to provide afunctional film having a surface property with both hydrophilic andantifouling properties. In addition, another object of an aspect of thepresent invention is to provide a liquid immersion member, a method ofmanufacturing a liquid immersion member, and an exposure apparatus whichare capable of reducing the number of exposure defects and reducingdeteriorations in productivity. Further, another object of an aspect ofthe present invention is to provide a device manufacturing method whichis capable of reducing the number of defective devices and reducingdeteriorations in productivity.

A functional film according to an aspect of the present invention is afunctional film which is applied to a surface of a base material used ina state of being immersed in liquid, the functional film including afilm of Ti-doped tetrahedral amorphous carbon (ta-C:Ti film).

For example, in the aspect described above, in a composition of thefilm, α, which is defined by the following Expression (1) and is anatomic ratio of Ti to C (Ti/C atomic ratio), is equal to or greater than0.03 and equal to or less than 0.09.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 1} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\alpha = \left( {{Ti}\text{/}C\mspace{14mu}{atomic}\mspace{14mu}{ratio}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right)} \right\}}\end{matrix} & (1)\end{matrix}$

here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having an sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having an sp² hybridorbital occupying the film

In the aspect described above, a static contact angle β of pure water ata surface of the film can be equal to or less than 30 degrees.

In the aspect described above, a contamination index γ of a surface ofthe film which is obtained through comparison with a surface of pure Tican be equal to or less than 80%.

In the aspect described above, the base material can be formed of Ti.

For example, in the aspect described above, the base material can beformed of Ti, and a proportion δ, which is defined by the followingExpression (2), of carbon atoms (sp³-C atoms) having an sp³ hybridorbital occupying the film can be equal to or less than 59%.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 2} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\delta = \left( {{proportion}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right) +} \right.} \\\left. \left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right) \right\}\end{matrix} & (2)\end{matrix}$

here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having an sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having an sp² hybridorbital occupying the film

A liquid immersion member according to an aspect of the presentinvention is a liquid immersion member having a liquid immersion spaceformed therein in a state where liquid is held between an object and theliquid immersion member so that an optical path of exposure light withwhich the object is irradiated is filled with the liquid, wherein theliquid immersion member is constituted of the base material covered withthe functional film according to the aspect described above, and thebase material has a mesh shape.

An exposure apparatus according to an aspect of the present invention isan exposure apparatus that exposes a substrate using exposure lightthrough liquid, the exposure apparatus including the liquid immersionmember according to the aspect described above.

In the aspect described above, the exposure apparatus can include theliquid immersion member in a portion of a liquid recovery mechanism thatrecovers liquid.

A device manufacturing method according to an aspect of the presentinvention includes: a step of exposing a substrate using the exposureapparatus according to the aspect described above; and a step ofdeveloping the exposed substrate.

A functional film according to an aspect of the present invention is afunctional film which is applied to a surface of a base material, thefunctional film including a film of Ti-doped tetrahedral amorphouscarbon (ta-C:Ti film), wherein in a composition of the film, α, which isdefined by the following Expression (3) and is an atomic ratio of Ti toC (Ti/C atomic ratio), is equal to or greater than 0.03 and equal to orless than 0.09.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 3} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\alpha = \left( {{Ti}\text{/}C\mspace{14mu}{atomic}\mspace{14mu}{ratio}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right)} \right\}}\end{matrix} & (3)\end{matrix}$

here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having an sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having an sp² hybridorbital occupying the film

For example, in the aspect described above, a thickness of the film isequal to or greater than 10 nm and equal to or less than 1 μm.

According to aspects of the present invention, it is possible to providea functional film having a surface property with both hydrophilic andantifouling properties. In addition, according to aspects of the presentinvention, it is possible to provide a liquid immersion member, a methodof manufacturing a liquid immersion member, and an exposure apparatuswhich are capable of improving throughput, and reducing the number ofexposure defects and reducing deteriorations in productivity. Further,according to aspects of the present invention, it is possible to providea device manufacturing method which is capable of reducing the number ofdefective devices and reducing deteriorations in productivity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a functional film according toan embodiment of the present invention.

FIG. 2A is a schematic configuration diagram showing an example of anFCVA film formation apparatus.

FIG. 2B is a diagram showing a method of manufacturing a liquidimmersion member according to a first embodiment.

FIG. 2C is a diagram showing a method of manufacturing the liquidimmersion member according to the first embodiment.

FIG. 3 is an exterior photograph obtained by capturing an image of afilm surface of each sample after a contamination acceleration test.

FIG. 4 is a diagram showing results obtained by measuring the quantifieddegree of contamination and the static contact angle of pure water withrespect to a ta-C film and a ta-C:Ti film having various Ti/C atomicratios.

FIG. 5 is a diagram showing chemical compositions of the ta-C:Ti filmfabricated using a graphite raw material having various Ticoncentrations.

FIG. 6 is a diagram showing relationships between bias voltages and thechemical compositions of the ta-C:Ti film.

FIG. 7 is a schematic configuration diagram showing an exposureapparatus according to the first embodiment.

FIG. 8 is a cross-sectional side view showing the vicinity of the liquidimmersion member according to the first embodiment.

FIG. 9A is a diagram showing an example of a mesh member according tothe first embodiment.

FIG. 9B is a diagram showing an example of the mesh member according tothe first embodiment.

FIG. 9C is a diagram showing an example of the mesh member according tothe first embodiment.

FIG. 10 is a cross-sectional side view showing the vicinity of a liquidimmersion member according to a second embodiment.

FIG. 11 is a cross-sectional side view showing the vicinity of a liquidimmersion member according to a third embodiment.

FIG. 12 is a cross-sectional side view showing the vicinity of a liquidimmersion member according to a fourth embodiment.

FIG. 13 is a cross-sectional side view showing the vicinity of a liquidimmersion member according to a fifth embodiment.

FIG. 14 is a cross-sectional side view showing the vicinity of a liquidimmersion member according to a sixth embodiment.

FIG. 15 is a diagram when the liquid immersion member shown in FIG. 14is seen from the upper side.

FIG. 16 is a diagram when the liquid immersion member shown in FIG. 14is seen from the lower side.

FIG. 17 is an enlarged view showing a portion of the liquid immersionmember shown in FIG. 14.

FIG. 18 is a flow diagram showing an example of a micro devicemanufacturing process.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings, but the present invention is notlimited thereto.

<Functional Film>

FIG. 1 is a cross-sectional view showing a functional film according toan embodiment of the present invention.

As a result of having repeated assiduous research in order to overcomethe above-mentioned problems, the inventors have succeeded infabricating a functional film with both hydrophilic and antifoulingproperties by controlling the Ti content of an amorphous carbon film.

As shown in FIG. 1, a functional film 208B according to the embodimentof the present invention is a functional film which is applied to thesurface of a base material 208A that is used in a state of beingimmersed in liquid. The functional film 208B is a Ti-doped tetrahedralamorphous carbon film (hereinafter, referred to as a “ta-C:Ti film”).The material of the base material 208A is not particularly limited, butsilicon (Si) or titanium (Ti), for example, can be used. A structurehaving the functional film 208B disposed on the surface of the basematerial 208A is also called a sample 208 below.

In the present embodiment, the functional film (ta-C:Ti film) 208B canbe formed on at least a portion of a region of the base material 208Awhich comes into contact with liquid by a filtered cathodic vacuum arcmethod (FCVA method).

An a-C:Ti film can be fabricated using a CVD method such as a microwaveplasma CVD (chemical vapor deposition) method, a direct-current plasmaCVD method, a high-frequency plasma CVD method, and an effectivemagnetic field plasma CVD method, or a PVD method (physical vapordeposition method) such as an ion beam deposition method, an ion beamsputtering method, a magnetron sputtering method, a laser evaporationmethod, a laser sputtering method, and an arc ion plating method, butthe ta-C:Ti film is not likely to be fabricated.

In addition, among the above-mentioned deposition methods, the FCVAmethod is a deposition method which is capable of performing coatinguniformly even on a base material having a complicated shape and with ahigh adhesion force even at room temperature.

The FCVA method is a deposition method in which particles ionized byperforming arc discharge on a target are generated, and a film is formedby guiding only the particles to a substrate. A schematic configurationdiagram of an FCVA apparatus 200 is shown in FIG. 2A. In the FCVAapparatus 200, an arc plasma generation chamber 201 having a graphitetarget 202 installed therein and a deposition chamber 206 are connectedto each other by a space filter 205. The deposition chamber 206 includesa substrate holder 207 therein. The substrate holder 207 fixes the basematerial 208A, and can incline the base material 208A in a θX directionor rotate the base material in a θY direction by a driving means whichis not shown. The space filter 205 is bent double in a −X-axis directionand a Y-axis direction. An electromagnetic coil 203 is wound around thespace filter 205, and an ion scan coil 204 is wound in the vicinity of acommunication portion with the deposition chamber 206.

In order to form the ta-C:Ti film using the FCVA method, adirect-current voltage is first applied to the graphite target 202within the arc plasma generation chamber 201, to thereby perform arcdischarge and generate arc plasma. Neutral particles, C⁺ ions, Ti⁺ ions,Ti²⁺ ions, Ti³⁺ ions, Ti⁴⁺ ions, and other ions in the generated arcplasma are transported to the space filter 205. In the course of passingthrough the space filter 205, the neutral particles are trapped by theelectromagnetic coil 203, and only the C⁺ ions, the Ti⁺ ions, the Ti²⁺ions, the Ti³⁺ ions, the Ti⁴⁺ ions, and other ions are guided into thedeposition chamber 206. In this case, the flight direction of an ionstream can be changed to any direction by the ion scan coil 204. Anegative bias voltage is applied to the base material 208A within thedeposition chamber 206. The C⁺ ions, the Ti⁺ ions, the Ti²⁺ ions, theTi³⁺ ions, the Ti⁴⁺ ions, and other ions which are ionized by the arcdischarge are accelerated by the bias voltage, and are deposited on thebase material 208A as a dense film.

The ta-C:Ti film formed in this manner is a solid film constituted of Catoms and Ti atoms, and is classified broadly into sp²-C having an sp²hybrid orbital and sp³-C having an sp³ hybrid orbital with respect to C.

In the FCVA method, the proportion of sp³-C can be controlled bycontrolling the bias voltage, and the ta-C film and the ta-C:Ti film canbe formed. Specifically, in the FCVA method, the content ratio ofsp²-C/sp³-C in the ta-C film and the ta-C:Ti film can be controlled byadjusting the bias voltage during film formation. The ta-C:Ti filmhaving a proportion of sp³-C equal to or less than 59% can be formed byadjusting the bias voltage.

On the other hand, the Ti content in the ta-C:Ti film can be controlledby changing the Ti content in a Ti-containing graphite sintered bodyused as a raw material.

In addition, in the FCVA method, only the C⁺ ions, the Ti⁺ ions, theTi²⁺ ions, the Ti³⁺ ions, the Ti⁴⁺ ions, and other ions which havesubstantially the same flight energy are guided into the depositionchamber 206, and ion impact energy of various ion particles incident onthe base material 208A can be controlled by controlling the bias voltagewhich is applied to the base material 208A. Therefore, uniform filmformation can be performed even in the base material 208A having acomplicated shape.

Regarding the composition of the ta-C:Ti film, when the atomic ratio ofTi to C (Ti/C atomic ratio) is defined as α, α is expressed by thefollowing Expression (1), and α is equal to or greater than 0.03 andequal to or less than 0.09. Thereby, the ta-C:Ti film has a surfaceproperty with both hydrophilic and antifouling properties. When α isless than 0.03, the film has an antifouling property, but does not havea sufficient hydrophilic property. On the other hand, when α is greaterthan 0.09, the film has a super-hydrophilic property, but does not havea sufficient antifouling property.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 1} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\alpha = \left( {{Ti}\text{/}C\mspace{14mu}{atomic}\mspace{14mu}{ratio}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right)} \right\}}\end{matrix} & (1)\end{matrix}$

Here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having an sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having an sp² hybridorbital occupying the film

When the static contact angle of pure water at the surface of thefunctional film 208B formed of such a ta-C:Ti film is defined as β, βcan be set to be equal to or less than 30 degrees. Thereby, thefunctional film 208B has a hydrophilic property.

In addition, when the contamination index of the surface of thefunctional film 208B formed of the ta-C:Ti film which is obtainedthrough comparison with a surface of pure Ti is defined as γ, γ can beset to be equal to or less than 80%. Thereby, the functional film 208Bhas an antifouling property.

In this manner, the functional film 208B formed of the ta-C:Ti film hasa surface property with both hydrophilic and antifouling properties.

In addition, when the base material 208A is formed of titanium (Ti), theproportion δ of carbon atoms (sp³-C atoms) having an sp³ hybrid orbitaloccupying the functional film which is defined in the followingExpression (2) can be set to be equal to or less than 59%. Thereby, theinternal stress of the functional film 208B is kept low, and asufficient adhesion force to the base material 208A can be secured.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 2} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\delta = \left( {{proportion}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right) +} \right.} \\\left. \left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right) \right\}\end{matrix} & (2)\end{matrix}$

Here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having an sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having an sp² hybridorbital occupying the film

EXAMPLES

Hereinafter, the present invention will be described more specificallyon the basis of examples studied in order to evaluate thecharacteristics of the functional film according to the embodiment ofthe present invention, but the present invention is not limited to theseexamples.

In the present examples, the sample 208 was fabricated by forming theTi-doped tetrahedral amorphous carbon film (ta-C:Ti film) 208B as afunctional film and the pure Ti film as a comparative experiment, on thebase material 208A formed of plate-like Si, and the characteristicsthereof were evaluated.

Manufacturing Example

The base material 208A was ultrasonically cleaned in an organic solvent,an alkaline solution, and pure water. The base material 208A aftercleaning was installed so that film formation was performed on onesurface (hereinafter, referred to as the A surface), on a base materialholder within the deposition chamber of an FCVA film formation apparatushaving a configuration as shown in FIG. 2A. Next, the ta-C:Ti film 208Bwas formed while inclining the base material holder so that the angle ofthe A surface of the base material 208A (denoted by “208” in FIGS. 2A to2C) was set to 45 degrees (φ=45 degrees in FIG. 2B) with respect to theemission direction of a carbon ion beam, and rotating the base material208A with the substrate holder in such a direction (θY direction) thatthe Y-axis of FIG. 2B was used as a rotational axis, and the sample 208was obtained.

In this case, graphite sintered bodies containing Ti of 0 at %, 1.0 at%, 1.25 at %, 1.50 at %, 1.8 at %, 2.15 at %, and 4.0 at %,respectively, as targets were used as raw materials. Arc plasma was thengenerated at an arc current of 80 A for each material and the rawmaterial was evaporated and ionized. The ta-C:Ti film 208B was formed onthe base material 208A by setting a bias voltage to −1980 V and applyinga pulse of 1500 Hz, and the sample 208 was fabricated. Each filmthickness was set to substantially 50 nm by controlling the filmformation time. The film thickness was measured by a stylus type stepprofiler. The film thickness is not limited to 50 nm, but the filmthickness between 10 nm and 1,000 nm may be selected. For example, thethickness of the ta-C:Ti film can be set to approximately 10, 20, 30,40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900, or1,000 nm. Meanwhile, a film having a Ti/C atomic ratio of 0 which isfabricated using a pure graphite sintered body raw material having a Ticontent of 0 at % is a ta-C film.

The chemical composition of each element in the ta-C:Ti film obtained inthis manner was measured. The chemical composition of each element inthe ta-C:Ti film was measured by RBS (Rutherford backscatteringspectrometry) and HFS (hydrogen forward scattering spectrometry). Theresults are shown in FIG. 5.

As obvious from FIG. 5, it can be understood that a good-qualityTi-containing tetrahedral amorphous carbon film (ta-C:Ti film) havingextremely low concentrations of O and H which are impurities isobtained. As the Ti concentration in the raw material increases, theTi/C atomic ratio of the ta-C:Ti film also increases.

In addition, a contamination acceleration test was performed on the ta-Cfilm and the ta-C:Ti film having a different Ti/C atomic ratio.

In the contamination acceleration test, the base material 208A formed ofplate-like Si was used, and each ta-C:Ti film 208B was formed using atarget having a different Ti/C atomic ratio as mentioned above. Inaddition, the base material 208A formed of pure Ti was also prepared byway of comparison. The sample 208 was vertically immersed in a solutioncontaining a topcoat component as a contamination solution, and wascontaminated for 40 hours by a shaker. The results are shown in FIG. 3.

FIG. 3 is an exterior photograph obtained by capturing an image of eachsample after the contamination acceleration test from above. Portionsappearing to be white are precipitated contaminants formed of a topcoatcomponent.

The ta-C film is almost not contaminated. On the other hand, the pure Tibase material is considerably contaminated. In the ta-C:Ti film, it isclearly known that as the Ti/C atomic ratio increases, the degree ofcontamination also increases. The area of the white contaminated regionwas quantified by performing an image process on each photograph of FIG.3.

FIG. 4 is a diagram showing results obtained by measuring the quantifieddegree of contamination and the static contact angle of pure water withrespect to the ta-C film and the ta-C:Ti film having a different Ti/Catomic ratio.

The static contact angle of pure water is indicated by values (Δ marks)measured before irradiation with ultraviolet rays having a wavelength of254 nm, after the ta-C:Ti film is exposed to the atmosphere before thecontamination test is performed, and values (O marks) measuredimmediately after the irradiation with ultraviolet rays.

First, a description is given of results obtained by measuring thestatic contact angle of pure water before the irradiation withultraviolet rays.

In a case where the Ti/C atomic ratio was 0 (zero: Ti is not contained),that is, in a case of the ta-C film, the static contact angle of purewater was approximately 40 degrees to 60 degrees before the irradiationwith ultraviolet rays.

On the other hand, it was found that the static contact angle of purewater of the Ti-doped ta-C:Ti film was approximately 40 degrees to 80degrees before the irradiation with ultraviolet rays and thewater-repellent property was high. In addition, it was also confirmedthat as the Ti/C atomic ratio became larger, the contact angle of purewater tended to become larger. Meanwhile, when pure Ti was alsoevaluated as the comparative example, it was found that in a case ofpure Ti, the static contact angle of pure water was 70 degrees to 80degrees and the water-repellent property was very high.

Next, a description is given of results obtained by measuring the staticcontact angle of pure water after the irradiation with ultraviolet rays.

When the Ti/C atomic ratio was 0 (zero: Ti is not contained), it wasfound that the contact angle was remarkably reduced to approximately 28degrees by the irradiation with ultraviolet rays, as compared to beforethe irradiation with ultraviolet rays (approximately 40 degrees to 60degrees).

Similarly to this, it was found that it was possible to reduce thecontact angle by the irradiation with ultraviolet rays with respect tothe ta-C:Ti film. A detailed description will be provided below.

In a sample of a region I of which the Ti/C atomic ratio (α) was lessthan 0.03, the contact angle of pure water was approximately 40 degreesto 60 degrees before the irradiation with ultraviolet rays. On the otherhand, similarly to a case where Ti was not contained, it was found thatthe contact angle of pure water was reduced to approximately 28 degreesby the irradiation with ultraviolet rays. In the region I, even when theTi concentration is changed, great fluctuations in numerical values arenot observed.

Next, in a region II of which the Ti/C atomic ratio (α) is equal to orgreater than 0.03 and equal to or less than 0.09, it was found that thecontact angle of pure water was approximately 45 degrees to 65 degreesbefore the irradiation with ultraviolet rays, but became less than 28degrees by the irradiation with ultraviolet rays. In addition, in theregion II, it was also found that as the Ti/C atomic ratio (α)increased, the contact angle of pure water decreased drastically.

In addition, in a region III of which the Ti/C atomic ratio (α) wasgreater than 0.09, it was found that the region had propertiesresembling those of pure Ti due to the high Ti concentration in thefilm, the contact angle of pure water was approximately 50 degrees to 70degrees before the irradiation with ultraviolet rays, but the region wasbrought into a super-hydrophilic state having a contact angle ofsubstantially 0 (zero) due to the irradiation with ultraviolet rays.

Meanwhile, it was also confirmed that the static contact angle of purewater for pure Ti was 70 degrees to 80 degrees and the water-repellentproperty was very high before the irradiation with ultraviolet rays, butthe region was brought into a super-hydrophilic state having a contactangle of substantially 0 due to the irradiation with ultraviolet rays.

In this manner, in the Ti-doped ta-C:Ti film, it turned out that thecontact angle of pure water greatly changed due to the irradiation withultraviolet rays. That is, the contact angle of pure water decreasesdrastically, and the film surface has a hydrophilic property. Inaddition, in the relationship with the Ti/C atomic ratio, it was foundthat as compared to a tendency before the irradiation with ultravioletrays (as the Ti/C atomic ratio increases, the contact angle of purewater increases), the tendency after the irradiation with ultravioletrays showed entirely different behavior.

Next, the degrees of contamination of the ta-C:Ti films of therespective regions I to III were evaluated. The degrees of contaminationwere relatively quantified (standardized by the area of the contaminatedregion of pure Ti) by setting the area of the contaminated region ofpure Ti to 1. The smaller numerical value represents that the degree ofcontamination is low. In other words, the smaller numerical value showsthat the film is not likely to be contaminated.

From FIG. 4, it can be understood that as the Ti/C atomic ratio (α)increases, the quantified degree of contamination (shown by ⋄ marks)tends to become larger, that is, to be easily contaminated.

The region I of which the Ti/C atomic ratio (α) was less than 0.03 hadthe degree of contamination of less than 0.15, and was not likely to becontaminated. In addition, in the range of the region I, even when theTi concentration changed, great fluctuations in numerical values werenot observed. Next, the region II of which the Ti/C atomic ratio (α) wasequal to or greater than 0.03 and equal to or less than 0.09 showed asharp increase in the degree of contamination as α became larger. Inaddition, the region III of which the Ti/C atomic ratio (α) was greaterthan 0.09 had properties resembling those of pure Ti due to the high Ticoncentration in the film, had a degree of contamination of equal to orgreater than 0.7, and was much more likely to be contaminated. Inaddition, in the range of the region III, even when the Ti concentrationwas changed, great fluctuations in numerical values were not seen, but atendency of saturation was shown.

From the above, regarding the antifouling property of the ta-C:Ti film,the degree of contamination was equal to less than 0.15 in the region Iof which α was less than 0.03, and the region was not likely to becontaminated. However, in this region, the contact angle was large, andthe hydrophilic property was not sufficient.

On the other hand, regarding the hydrophilic property of the ta-C:Tifilm, the region III of which α was greater than 0.09 was brought into asuper-hydrophilic state where the contact angle of pure water was 0(zero). However, the region III had a degree of contamination equal toor greater than 0.7, had the same level as that of pure Ti, and was muchmore likely to be contaminated.

On the other hand, in the region II in which α was equal to or greaterthan 0.03 and equal to or less than 0.09, it was found that the contactangle was small, the degree of contamination was also kept low, and boththe antifouling property and the hydrophilic property were provided.Particularly, it was found that a sample in a region IIS in which α wasequal to or greater than 0.04 and equal or less than 0.05 had anexcellent balance of both the antifouling property and the hydrophilicproperty, and particularly good characteristics were shown.

A property required for the mesh surface of the liquid immersionexposure apparatus may simply be the ability to hold liquid immersionwater, and thus a moderate hydrophilic property in which the staticcontact angle of pure water is less than approximately 30 degrees isgood enough without a super-hydrophilic property being required.Preferably, the contact angle is equal to or less than 20 degrees. Onthe other hand, it is preferable that the antifouling property behigher. In other words, it is preferable that the surface is unlikely tobe contaminated. Consequently, it can be concluded that the ta-C:Ti filmhaving the Ti concentration of the region II in FIG. 4 is a ta-C:Ti filmhaving both the antifouling property and the hydrophilic property.Particularly, it was clarified that the ta-C:Ti film having the Ticoncentration of the region IIS of which the Ti/C atomic ratio (α) isequal to or greater than 0.04 and equal or less than 0.05 had excellentcharacteristics.

It can be understood from FIG. 5 that such a ta-C:Ti film serving as theregion IIS of which the Ti/C atomic ratio (α) is equal to or greaterthan 0.04 and equal or less than 0.05 can be fabricated by using agraphite sintered body raw material having a Ti content of 1.25 at % or1.5 at %.

The sp²-C/sp³-C atomic ratio of the ta-C:Ti film fabricated using thegraphite sintered body raw material having a Ti content of 1.5 at % wasmeasured. The atomic ratio of sp²-C atoms to sp³-C atoms was measured byX-ray photoelectron spectroscopy (XPS).

In addition, the ta-C:Ti film was fabricated by changing a bias voltage.The chemical composition of each element of the obtained ta-C:Ti filmwas measured. The results are shown in FIG. 6.

Meanwhile, the base material 208A formed of Si was used in the sample208 for chemical composition measurement. The base material 208A formedof Ti was used in the sample 208 for stress measurement.

From FIG. 6, it turned out that it was possible to change thesp²-C/sp³-C atomic ratio by changing the bias voltage.

It can be understood that the proportion (δ) of sp³-C atoms in all theelements constituting the ta-C:Ti film is equal to or less than 59 at %.The value is important. When the sp³-C atomic ratio (δ) exceeds 60 at %,compressive stress is increased, and thus an adhesion force is not ableto be secured substantially in various applications. Therefore, in orderto secure an adhesion force, the proportion of sp³-C atoms in all theelements constituting the film can be set to be equal to or less than 59at %. Further, the proportion of sp³-C atoms is preferably equal to orless than 49 at %.

Meanwhile, as the bias voltage, any voltage value between −190 V and−3,000 V may be selected. Thereby, the ta-C:Ti film having lowcompressive stress is obtained. On the other hand, when any voltagevalue between floating and −150 V is selected, the ta-C:Ti film havinghigh compressive stress is obtained. In this case, an adhesion force toa Ti mesh becomes weak.

In addition, as understood from FIG. 6, even when the bias voltage ischanged, the Ti/C atomic ratio in the ta-C:Ti film remains constant withno change. On the other hand, even when an arc current capable ofchanging an evaporation rate is changed, the Ti/C atomic ratio (α) inthe ta-C:Ti film remains constant with no change. Therefore, thechemical composition and the Ti/C atomic ratio (α) of the ta-C:Ti filmcan be unmistakably controlled only by the Ti concentration in the rawmaterial.

In the liquid immersion exposure apparatus including the liquidimmersion member constituted by a mesh member obtained by forming thefilm of the region II, a continuous exposure operation was able to beperformed while moving a stage at high speed in a state where liquidimmersion water was held, and the contamination rate of the liquidimmersion member was approximately one-fifth of that of the related art.Therefore, the frequency of stopping the apparatus for the purpose ofcleaning and exchanging the liquid immersion member was also one-fifthof that, and thus it was possible to provide a liquid immersion exposureapparatus having much higher throughput than that of an apparatus of therelated art.

As described above, the functional film formed of the ta-C:Ti filmaccording to the embodiment of the present invention has both goodhydrophilic and antifouling properties.

Such a functional film is used, and thus it is possible to provide aliquid immersion member, a method of manufacturing the liquid immersionmember, and an exposure apparatus, which are capable of improvingthroughput, reducing the number of exposure defects, and reducingdeteriorations in productivity. Further, it is possible to provide adevice manufacturing method capable of reducing the number of defectivedevices and reducing deteriorations in productivity.

Hereinafter, the liquid immersion member and the exposure apparatususing the functional film according to the embodiment of the presentinvention will be described.

Meanwhile, in the following description, an XYZ orthogonal coordinatesystem is set, and a positional relationship between respective memberswill be described with reference to the XYZ orthogonal coordinatesystem. A predetermined direction within the horizontal plane is set toan X-axis direction, a direction orthogonal to the X-axis directionwithin the horizontal plane is set to a Y-axis direction, and adirection (that is, vertical direction) perpendicular to each of theX-axis direction and the Y-axis direction is set to a Z-axis direction.In addition, rotational (tilting) directions around an X-axis, a Y-axis,and a Z-axis are set to a θX direction, a θY direction, and a θZdirection, respectively. In each embodiment described later, all thebase materials of a mesh member 24 (porous member) covered with thefunctional film are formed of Ti.

First Embodiment

A first embodiment will be described below. FIG. 7 is a schematicconfiguration diagram showing an example of an exposure apparatus EXaccording to the first embodiment. In FIG. 7, the exposure apparatus EXincludes a mask stage 1 that movably holds a mask M, a substrate stage 2that movably holds a substrate P, a first drive system 1D that moves themask stage 1, a second drive system 2D that moves the substrate stage 2,an interferometer system 3 capable of measuring positional informationof the mask stage 1 and the substrate stage 2, an illumination system ILthat illuminates the mask M with exposure light EL, a projection opticalsystem PL that projects an image of a pattern of the mask M, illuminatedwith the exposure light EL, onto the substrate P, and a controlapparatus 4 that controls an operation of the entire exposure apparatusEX.

The mask M includes a reticle on which a device pattern projected ontothe substrate P is formed. The mask M includes a transmissive maskhaving a predetermined pattern formed on a transparent plate such as,for example, a glass plate using a light-shielding film such aschromium. Meanwhile, a reflective mask can also be used as the mask M.The substrate P is a substrate for manufacturing a device. The substrateP includes, for example, a base material such as a semiconductor waferlike a silicon wafer on which a photosensitive film is formed. Thephotosensitive film is a film formed of a photosensitive material(photoresist). In addition, the substrate P may include a film otherthan the photosensitive film. For example, the substrate P may includean antireflection film, and may include a protective film (topcoat film)that protects the photosensitive film.

The exposure apparatus EX of the present embodiment is a liquidimmersion exposure apparatus that exposes the substrate P with theexposure light EL through liquid LQ. The exposure apparatus EX includesa liquid immersion member 6 capable of forming a liquid immersion spaceLS so that at least a portion of an optical path K of the exposure lightEL is filled with the liquid LQ. The liquid immersion space LS is aspace which is filled with the liquid LQ. In the present embodiment,water (pure water) is used as the liquid LQ.

In the present embodiment, the liquid immersion space LS is formed sothat the optical path K of the exposure light EL emitted from a terminaloptical element 5 which is closest to the image plane of the projectionoptical system PL among a plurality of optical elements of theprojection optical system PL is filled with the liquid LQ. The terminaloptical element 5 has an emission surface 5U for emitting the exposurelight EL toward the image plane of the projection optical system PL. Theliquid immersion space LS is formed so that the optical path K betweenthe terminal optical element 5 and an object disposed at a positionfacing the emission surface 5U of the terminal optical element 5 isfilled with the liquid LQ. The position facing the emission surface 5Uincludes an irradiation position of the exposure light EL emitted fromthe emission surface 5U.

The liquid immersion member 6 is disposed in the vicinity of theterminal optical element 5. The liquid immersion member 6 has a lowersurface 7. In the present embodiment, the object capable of facing theemission surface 5U can face the lower surface 7. When the surface ofthe object is disposed at the position facing the emission surface 5U,at least a portion of the lower surface 7 and the surface of the objectface each other. When the emission surface 5U and the surface of theobject face each other, the liquid LQ can be held between the emissionsurface 5U and the surface of the object. In addition, when the lowersurface 7 of the liquid immersion member 6 and the surface of the objectface each other, the liquid LQ can be held between the lower surface 7and the surface of the object. The liquid immersion space LS is formedby the liquid LQ held between the emission surface 5U and the lowersurface 7 on one side and the surface of the object on the other side.

In the present embodiment, the object capable of facing the emissionsurface 5U and the lower surface 7 includes an object movable on theemission side (image plane side) of the terminal optical element 5, andincludes an object movable to the position facing the emission surface5U and the lower surface 7. In the present embodiment, the objectincludes at least one of the substrate stage 2 and the substrate P heldby the substrate stage 2. Meanwhile, in the following, for the purposeof simplifying description, a state where the emission surface 5U andthe lower surface 7 on one side and the surface of the substrate P onthe other side face each other will be chiefly described by way ofexample. However, the same is true of a case where the emission surface5U and the lower surface 7 on one side and the surface of the substratestage 2 on the other side face each other.

In the present embodiment, the liquid immersion space LS is formed sothat a region (local region) of a portion of the surface of thesubstrate P disposed at the position facing the emission surface 5U andthe lower surface 7 is covered with the liquid LQ, and an interface (ameniscus or an edge) LG of the liquid LQ is formed between the surfaceof the substrate P and the lower surface 7. That is, in the presentembodiment, the exposure apparatus EX adopts a local liquid immersionsystem in which the liquid immersion space LS is formed so that aportion of a region on the substrate P including a projection region PRof the projection optical system PL is covered with the liquid LQ duringthe exposure of the substrate P.

The illumination system IL illuminates a predetermined illuminationregion IR with the exposure light EL having a uniform illuminancedistribution. The illumination system IL illuminates at least a portionof the mask M disposed in the illumination region IR with the exposurelight EL having a uniform illuminance distribution. As the exposurelight EL emitted from the illumination system IL, for example, emissionlines (g line, h line, and i line) emitted from a mercury lamp,far-ultraviolet light (DUV light) such as KrF excimer laser light(having a wavelength of 248 nm) and ArF excimer laser light (having awavelength of 193 nm), vacuum-ultraviolet light (VUV light) such as F₂laser light (having a wavelength of 157 nm), and the like are used. Inthe present embodiment, as the exposure light EL, ArF excimer laserlight which is ultraviolet light (far-ultraviolet light) is used.

The mask stage 1 has a mask holding portion 1H that holds the mask M.The mask holding portion 1H can cause the mask M to be removedtherefrom. In the present embodiment, the mask holding portion 1H holdsthe mask M so that the pattern forming surface (lower surface) of themask M and the XY plane are substantially parallel to each other. Thefirst drive system 1D includes an actuator such as a linear motor. Themask stage 1 can move within the XY plane by the operation of the firstdrive system 1D in a state where the mask M is held. In the presentembodiment, the mask stage 1 can move in three directions of the X-axisdirection, the Y-axis direction, and the θZ direction in a state wherethe mask M is held by the mask holding portion 1H.

The projection optical system PL irradiates a predetermined projectionregion PR with the exposure light EL. The projection optical system PLprojects an image of a pattern of the mask M, at a predeterminedprojection magnification, onto at least a portion of the substrate Pdisposed in the projection region PR. The plurality of optical elementsof the projection optical system PL are held by a lens barrel PK. Theprojection optical system PL of the present embodiment is a reductionsystem of which the projection magnification is, for example, ¼, ⅕, ⅛ orthe like. Meanwhile, the projection optical system PL may be any of anequalization system and a magnification system. In the presentembodiment, an optical axis AX of the projection optical system PL issubstantially parallel to the Z-axis. In addition, the projectionoptical system PL may be any of a refraction system which does notinclude a reflective optical element, a reflection system which does notinclude a refractive optical element, and a reflection and refractionsystem which includes a reflective optical element and a refractiveoptical element. In addition, the projection optical system PL may formany of an inverted image and an erected image.

The substrate stage 2 can move on a guide surface 8G of a base member 8.In the present embodiment, the guide surface 8G is substantiallyparallel to the XY plane. The substrate stage 2 can move within the XYplane along the guide surface 8G in a state where the substrate P isheld.

The substrate stage 2 has a substrate holding portion 2H that holds thesubstrate P. The substrate holding portion 2H can releasably hold thesubstrate P. In the present embodiment, the substrate holding portion 2Hholds the substrate P so that the exposure surface (surface) of thesubstrate P and the XY plane are substantially parallel to each other.The second drive system 2D includes an actuator such as a linear motor.The substrate stage 2 can move within the XY plane by the operation ofthe second drive system 2D in a state where the substrate P is held. Inthe present embodiment, the substrate stage 2 can move in six directionsof the X-axis direction, the Y-axis direction, the Z-axis direction, theθX direction, the θY direction, and the θZ direction in a state wherethe substrate P is held by the substrate holding portion 2H.

The substrate stage 2 has an upper surface 2T disposed in the vicinityof the substrate holding portion 2H. In the present embodiment, theupper surface 2T is flat, and is substantially parallel to the XY plane.In addition, the substrate stage 2 has a concave portion 2C. Thesubstrate holding portion 2H is disposed inside the concave portion 2C.In the present embodiment, the upper surface 2T and the surface of thesubstrate P held by the substrate holding portion 2H are disposed insubstantially the same plane (are flush with each other).

The interferometer system 3 measures positional information of the maskstage 1 and the substrate stage 2 in the XY plane. The interferometersystem 3 includes a laser interferometer 3A that measures the positionalinformation of the mask stage 1 in the XY plane and a laserinterferometer 3B that measures the positional information of thesubstrate stage 2 in the XY plane. The laser interferometer 3Airradiates a reflective surface 1R disposed on the mask stage 1 withmeasurement light, and measures the positional information of the maskstage 1 (mask M) regarding the X-axis direction, the Y-axis direction,and the θZ direction, using the measurement light through the reflectivesurface 1R. The laser interferometer 3B irradiates a reflective surface2R disposed on the substrate stage 2 with measurement light, andmeasures the positional information of the substrate stage 2 (substrateP) regarding the X-axis direction, the Y-axis direction, and the θZdirection, using the measurement light through the reflective surface2R.

In addition, in the present embodiment, a focusing and levelingdetection system (not shown in the drawing) that detects positionalinformation of the surface of the substrate P held by the substratestage 2 is disposed. The focusing and leveling detection system detectsthe positional information of the surface of the substrate P regardingthe Z-axis direction, the θX direction, and the θY direction.

When the substrate P is exposed, the positional information of the maskstage 1 is measured by the laser interferometer 3A, and the positionalinformation of the substrate stage 2 is measured by the laserinterferometer 3B. The control apparatus 4 brings the first drive system1D into operation on the basis of the measurement result of the laserinterferometer 3A, and executes position control of the mask M held bythe mask stage 1. In addition, the control apparatus 4 brings the seconddrive system 2D into operation on the basis of the measurement result ofthe laser interferometer 3B and the detection result of the focusing andleveling detection system, and executes position control of thesubstrate P held by the substrate stage 2.

The exposure apparatus EX of the present embodiment is a scanning-typeexposure apparatus (so-called scanning stepper) that projects an imageof the pattern of the mask M onto the substrate P while synchronouslymoving the mask M and the substrate P in a predetermined scanningdirection. When the substrate P is exposed, the control apparatus 4controls the mask stage 1 and the substrate stage 2, and moves the maskM and the substrate P in a predetermined scanning direction within theXY plane intersecting the optical path (optical axis AX) of the exposurelight EL. In the present embodiment, the scanning direction (synchronousmovement direction) of the substrate P is set to the Y-axis direction,and the scanning direction (synchronous movement direction) of the maskM is also set to the Y-axis direction. The control apparatus 4 moves thesubstrate P in the Y-axis direction with respect to the projectionregion PR of the projection optical system PL, and moves the mask M inthe Y-axis direction with respect to the illumination region IR of theillumination system IL in synchronization with the movement of thesubstrate P in the Y-axis direction, while irradiating the substrate Pwith the exposure light EL through the projection optical system PL andthe liquid LQ of the liquid immersion space LS on the substrate P.Thereby, the substrate P is exposed with the exposure light EL, and theimage of the pattern of the mask M is projected onto the substrate P.

Next, an example of the liquid immersion member 6 according to thepresent embodiment and a method of manufacturing the liquid immersionmember 6 will be described with reference to the accompanying drawings.FIG. 8 is a cross-sectional side view showing the vicinity of the liquidimmersion member 6.

Meanwhile, in the following description, a case where the surface of thesubstrate P is disposed at the position facing the emission surface 5Uof the terminal optical element 5 and the lower surface 7 of the liquidimmersion member 6 is described by way of example. However, as describedabove, objects, such as the upper surface 2T of the substrate stage 2,other than the substrate P can also be disposed at the position facingthe emission surface 5U of the terminal optical element 5 and the lowersurface 7 of the liquid immersion member 6. In addition, in thefollowing description, the emission surface 5U of the terminal opticalelement 5 may be referred to as the lower surface 5U of the terminaloptical element 5.

The liquid immersion member 6 can form the liquid immersion space LS sothat the optical path K of the exposure light EL between the terminaloptical element 5 and the substrate P is filled with the liquid LQ. Theliquid immersion member 6 is an annular member, and is disposed so as tosurround the optical path K of the exposure light EL. In the presentembodiment, the liquid immersion member 6 includes a side plate portion12 disposed in the vicinity of the terminal optical element 5, and alower plate portion 13 of which at least a portion is disposed betweenthe lower surface 5U of the terminal optical element 5 and the surfaceof the substrate P, in the Z-axis direction.

Meanwhile, the liquid immersion member 6 may be not an annular member.For example, the liquid immersion member 6 may be disposed in a portionof the vicinity of the optical path K of the exposure light EL emittedfrom the terminal optical element 5 and the emission surface 5U.

The side plate portion 12 faces an outer circumferential surface 14 ofthe terminal optical element 5, and a predetermined gap is formedbetween the side plate portion and an inner circumferential surface 15which is formed along the outer circumferential surface.

The lower plate portion 13 has an opening 16 in the center thereof. Theexposure light EL emitted from the lower surface 5U can pass through theopening 16. For example, the exposure light EL emitted from the lowersurface 5U during the exposure of the substrate P passes through theopening 16, and the surface of the substrate P is irradiated with theexposure light through the liquid LQ. In the present embodiment, theexposure light EL in the opening 16 is long and rectangular(slit-shaped) in cross-sectional shape in the X-axis direction. Theopening 16 has a shape according to the cross-sectional shape of theexposure light EL. That is, the opening 16 in the XY plane isrectangular (slit-shaped) in shape. In addition, the cross-sectionalshape of the exposure light EL in the opening 16 and the shape of theprojection region PR of the projection optical system PL in thesubstrate P are substantially the same as each other.

In addition, the liquid immersion member 6 includes a supply port 31that supplies the liquid LQ used to form the liquid immersion space LS,and a recovery port 32 that suctions and recovers at least a portion ofthe liquid LQ on the substrate P.

In the present embodiment, the lower plate portion 13 of the liquidimmersion member 6 is disposed in the vicinity of the optical path ofthe exposure light EL. An upper surface 33 of the lower plate portion 13is directed toward the +Z-axis direction, and the upper surface 33 andthe lower surface 5U face each other with a predetermined gap interposedtherebetween. The supply port 31 can supply the liquid LQ to an internalspace 34 between the lower surface 5U and the upper surface 33. In thepresent embodiment, the supply port 31 is provided on each of both sidesin the Y-axis direction with respect to the optical path K.

The supply port 31 is connected to a liquid supply device 35 through achannel 36. The liquid supply device 35 can send out the liquid LQ whichis cleaned and temperature-regulated. The channel 36 includes a supplychannel 36A formed inside the liquid immersion member 6, and a channel36B formed by a supply tube that connects the supply channel 36A to theliquid supply device 35. The liquid LQ sent out from the liquid supplydevice 35 is supplied to the supply port 31 through the channel 36. Thesupply port 31 supplies the liquid LQ from the liquid supply device 35to the optical path K.

The recovery port 32 is connected to a liquid recovery device 37 througha channel 38. The liquid recovery device 37 includes a vacuum system,and can suction and recover the liquid LQ. The channel 38 includes arecovery channel 38A formed inside the liquid immersion member 6, and achannel 38B formed by a recovery tube that connects the recovery channel38A to the liquid recovery device 37. By the liquid recovery device 37being operated, the liquid LQ recovered from the recovery port 32 isrecovered to the liquid recovery device 37 through the channel 38.

In the present embodiment, the mesh member 24 (porous member) isdisposed in the recovery port 32 of the liquid immersion member 6. Atleast a portion of the liquid LQ between the substrate P and the meshmember is recovered through the recovery port 32 (mesh member 24). Thelower surface 7 of the liquid immersion member 6 includes a land surface21 disposed in the vicinity of the optical path K of the exposure lightEL, and a liquid recovery region 22 provided outside the land surface 21with respect to the optical path K of the exposure light EL. In thepresent embodiment, the liquid recovery region 22 includes the surface(lower surface) of the mesh member 24.

In the following description, the liquid recovery region 22 may bereferred to as the recovery surface 22.

The land surface 21 can hold the liquid LQ between the surface of thesubstrate P and the land surface. In the present embodiment, the landsurface 21 is directed toward the −Z-axis direction, and includes thelower surface of the lower plate portion 13. The land surface 21 isdisposed in the vicinity of the opening 16. In the present embodiment,the land surface 21 is flat, and is substantially parallel to thesurface (XY plane) of the substrate P. In the present embodiment, theland surface 21 in the XY plane is rectangular in outer shape, but mayhave other shapes, for example, a circular shape.

The recovery surface 22 can recover at least a portion of the liquid LQbetween the lower surface 5U and the lower surface 7 on one side and thesurface of the substrate P on the other side. The recovery surface 22 isdisposed on each of both sides in the Y-axis direction (scanningdirection) with respect to the optical path K of the exposure light EL.In the present embodiment, the recovery surface 22 is disposed in thevicinity of the optical path K of the exposure light EL. That is, therecovery surface 22 is disposed in an annular rectangular shape in thevicinity of the land surface 21. In addition, in the present embodiment,the land surface 21 and the recovery surface 22 are disposed insubstantially the same plane (are flush with each other). Meanwhile, theland surface 21 and the recovery surface may not be disposed in the sameplane.

The recovery surface 22 includes the surface (lower surface) of the meshmember 24, and recovers the liquid LQ which is in contact with therecovery surface 22 through holes of the mesh member 24.

FIG. 9A is an enlarged plan view showing the mesh member 24 of thepresent embodiment, and FIG. 9B is a cross-sectional view taken along anarrow of line A-A in FIG. 9A. As shown in FIGS. 9A and 9B, in thepresent embodiment, the mesh member 24 is a thin plate member in which aplurality of small holes 24H are formed. The mesh member 24 is a memberin which the plurality of holes 24H are formed by processing a thinplate member, and is also called a mesh plate.

The mesh member 24 has a lower surface 24B facing the surface of thesubstrate P, and an upper surface 24A located on the opposite side tothe lower surface 24B. The lower surface 24B has the recovery surface 22formed thereon. The upper surface 24A comes into contact with therecovery channel 38A. The holes 24H are formed between the upper surface24A and the lower surface 24B. That is, the holes 24H are formed so asto penetrate through the upper surface 24A and the lower surface 24B. Inthe following description, the hole 24H may be referred to as thethrough-hole 24H.

In the present embodiment, the upper surface 24A and the lower surface24B are substantially parallel to each other. That is, in the presentembodiment, the upper surface 24A and the lower surface 24B aresubstantially parallel to the surface of the substrate P (XY plane). Inthe present embodiment, the through-hole 24H penetrates between theupper surface 24A and the lower surface 24B in substantially parallel tothe Z-axis direction. The liquid LQ can flow through the through-hole24H. The liquid LQ on the substrate P is drawn into the recovery channel38A through the through-hole 24H.

In the present embodiment, the through-hole (opening) 24H in the XYplane is circular in shape. In addition, the size of the through-hole(opening) 24H in the upper surface 24A and the size of the through-hole(opening) 24H in the lower surface 24B are substantially equal to eachother. Meanwhile, the shape of the through-hole 24H in the XY plane maybe shapes other than a circular shape, for example, polygonal shapessuch as a pentagonal shape and a hexagonal shape. In addition, thediameter or shape of the through-hole (opening) 24H in the upper surface24A may be different from the diameter or shape of the through-hole(opening) 24H in the lower surface 24B.

In the present embodiment, the control apparatus 4 brings the liquidrecovery device 37 including the vacuum system into operation, andgenerates a pressure difference between the upper surface 24A and thelower surface 24B of the mesh member 24, to thereby recover the liquidLQ from the mesh member 24 (recovery surface 22). The liquid LQrecovered from the recovery surface 22 is recovered to the liquidrecovery device 37 through the channel 38.

There is the possibility of substances (for example, organic substancessuch as a resist and a topcoat) eluted from the substrate P into theliquid LQ, during the exposure of the substrate P, being reprecipitatedon the surface of the member constituting the liquid immersion member 6.When precipitates are generated in a region which is in contact with theliquid LQ of the liquid immersion member 6, there is the possibility ofthe precipitates being peeled off by a liquid flow (water flow) andbeing attached to the substrate P.

In the present embodiment, the functional film as described above, thatis, the Ti-doped tetrahedral amorphous carbon film (ta-C:Ti film) isformed in at least a portion of the region which is in contact with theliquid LQ of the liquid immersion member 6. The ta-C:Ti film ischemically inactive, and has a property excellent in an adhesion forceto a ground (base material) on which the film is to be formed. Inaddition, the ta-C:Ti film of the present embodiment has both ahydrophilic property and an antifouling property.

For this reason, in the present embodiment, in a region of the liquidimmersion member 6 where the ta-C:Ti film is formed, even when achemical affinity with a resist component or a topcoat component elutedinto the adjoining liquid LQ is low, and the wetting and drying of theliquid LQ are repeated, the adhesion and reprecipitation of the resistcomponent or the topcoat component in the liquid LQ are not likely tooccur. Therefore, it is possible to effectively reduce the number ofexposure defects due to the reprecipitation of the topcoat component onthe surface of the liquid immersion member 6 in the region which is incontact with the liquid LQ, the peeling-off of the reprecipitates, andthe attachment thereof to the surface of the substrate P duringexposure. It is thereby possible to improve throughput.

In the present embodiment, a portion having the ta-C:Ti film formed onthe surface of the liquid immersion member 6 is not particularly limitedas long as it is a region which comes into contact with the liquid LQ.The portion may have only to be formed on at least a portion of a regionwhich comes into contact with the liquid LQ of the liquid recoveryregion 22 (recovery port 32 and mesh member 24), the land surface 21,the lower plate portion 13, and the side plate portion 12. The ta-C:Tifilm can be configured to be formed in a region in which thereprecipitation of the resist component or the topcoat component has atendency to occur, and a region which has a tendency to be influenced bythe liquid flow of the liquid LQ, among these members constituting theliquid immersion member 6.

With such a configuration, it is possible to suppress thereprecipitation of the resist component or the topcoat component, and tosuppress the peeling-off of the reprecipitates and the adhesion thereofto the substrate P. The region in which the reprecipitation of theresist component or the topcoat component has a tendency to occur andthe region which has a tendency to be influenced by the liquid flow ofthe liquid LQ include particularly the recovery port 32 (mesh member 24)of the liquid recovery region 22. The ta-C:Ti film is formed on thesurface of the recovery port 32 (mesh member 24), and thus it ispossible to effectively suppress the reprecipitation of the resistcomponent or the topcoat component, the peeling-off of thereprecipitates, and the adhesion of the reprecipitates to the substrateP, and to reduce the number of exposure defects.

In addition, according to the present embodiment, since thereprecipitation of the resist component or the topcoat component on theliquid immersion member 6 is not likely to occur, it is possible toreduce the frequency of cleaning of the liquid immersion member 6. Inaddition, the ta-C:Ti film is formed on the surface of the liquidimmersion member 6. Thereby, even when the reprecipitation of the resistcomponent or the topcoat component is caused by a repeated exposureprocess, a low chemical affinity between the surface of the liquidimmersion member 6 and the resist component or the topcoat componentgives rise to a weak adhesion force therebetween, and thus it ispossible to shorten the cleaning time of the reprecipitates. Therefore,according to the present embodiment, since the frequency and time of thecleaning work can be reduced, it is possible to shorten the downtime ofthe liquid immersion exposure apparatus, and to reduce deteriorations inproductivity.

In the present embodiment, the base material of the liquid immersionmember 6 is made of Ti. Thereby, the internal stress of the ta-C:Ti filmis kept low, and thus it is possible to secure a sufficient adhesionforce to the base material of the liquid immersion member 6. Meanwhile,the base material of the liquid immersion member 6 may becorrosive-resistant metal products or ceramic products made of stainlesssteel, Al or the like.

The thickness of the ta-C:Ti film formed in at least a portion of theliquid immersion member 6 is not particularly limited, but can be set tobe equal to or greater than 5 nm, and is preferably 10 nm to 1 μm. Asthe ta-C:Ti film, a film having hydrogen scarcely contained therein canbe used.

FIG. 9C is a cross-sectional view taken along an arrow showing anexample when the ta-C:Ti film is formed in the mesh member 24 of therecovery port 32 in the present embodiment.

In the present embodiment, as shown in FIG. 9C, the ta-C:Ti film isformed on the lower surface 24B, the inner wall surface of thethrough-hole 24H, and the upper surface 24A. The thicknesses of theta-C:Ti film on the lower surface 24B, the inner wall surface of thethrough-hole 24H, and the upper surface 24A are not particularlylimited. A continuous ta-C:Ti film may be formed without being formed inan island shape in order to obtain an effect obtained by forming achemically inactive ta-C:Ti film, and the thicknesses thereof can be setto be equal to or greater than 5 nm, preferably 10 nm to 1 μm. Forexample, the thicknesses of the ta-C:Ti film can be set to approximately10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700,800, 900, or 1,000 nm. The thicknesses of the ta-C:Ti film formed on thelower surface 24B, the upper surface 24A, and the inner wall surface ofthe through-hole 24H may be substantially the same as or different fromeach other. The thickness of the ta-C:Ti film on the inner wall surfaceof the through-hole 24H can be adjusted by the hole diameter of thethrough-hole 24H. Meanwhile, the ta-C:Ti film may be formed on only thelower surface 24B and/or the upper surface 24A.

In the present embodiment, as shown in FIG. 9C, when the ta-C:Ti film isformed in the mesh member 24 of the recovery port 32, the film formationcan be performed using an FCVA method which is capable of performinguniform film formation even on the inner wall surface of the finethrough-hole 24H.

As shown in FIG. 9C, a description will be given of a method of formingthe ta-C:Ti film on the upper surface 24A, the lower surface 24B, andthe inner wall surface of the through-hole 24H of the mesh member 24using an FCVA method.

First, in the FCVA apparatus 200 shown in FIG. 2A, the mesh member 24 isinstalled on the substrate holder 207 so that the upper surface 24A ofthe mesh member 24 faces the flight direction (Y-axis direction) of C⁺ion particles. Next, as shown in FIG. 2B, by operating the substrateholder 207 through driving means which is not shown in the drawing, themesh member 24 is rotated in the θX direction, and is inclined so thatthe plane of the upper surface 24A is set to have an angle Φ withrespect to the Y-axis which is the flight direction of C⁺ ions. Further,the ta-C:Ti film is formed while rotating the mesh member in the θYdirection through driving means (not shown in the drawing) of thesubstrate holder 207. By installing and rotating the mesh member 24 insuch a manner and performing film formation, the C⁺ ions reach not onlythe upper surface 24A of the mesh member 24, but also the inner wallsurface of the through-hole 24H, thereby allowing the ta-C:Ti film to beformed. Meanwhile, the tilt angle Φ of the plane of the upper surface24A of the mesh member 24 with respect to the Y-axis (flight directionof C⁺ ions) is not particularly limited as long as it is an angle atwhich the C⁺ ions reach the inside of the through-hole 24H of the meshmember 24 and the ta-C:Ti film can be formed on the inner wall surfaceof the through-hole 24H. For example, the tilt angle can be set to 45degrees.

After the ta-C:Ti film is formed on the upper surface 24A side of themesh member 24, the mesh member 24 is removed from the substrate holder207, and the mesh member 24 having one surface (upper surface 24A) onwhich the film is formed is installed on the substrate holder 207 sothat the lower surface 24B faces the flight direction (Y-axis direction)of C⁺ ion particles. Next, the ta-C:Ti film is formed on the lowersurface 24B side of the mesh member 24 in the same procedure as that ofthe aforementioned film formation method of the upper surface 24A sidewhile rotating the mesh member at the tilt angle Φ in the θY direction.The tilt angle Φ of the plane of the lower surface 24B with respect tothe Y-axis when the ta-C:Ti film is formed on the lower surface 24B sideof the mesh member 24 can be set to the same as the tilt angle Φ of theplane of the lower surface 24A with respect to the Y-axis when filmformation is performed on the upper surface 24A side. By installing themesh member 24 and performing film formation so that the tilt angle Φduring the film formation on the upper surface 24A side and the tiltangle Φ during the film formation of the lower surface 24B side are thesame as each other, it is possible to achieve the uniformity of thethickness of the ta-C:Ti film formed on the inner wall surface of thethrough-hole 24H. The ta-C:Ti film is formed on the upper surface 24A,the lower surface 24B, and the inner wall surface of the through-hole24H of the mesh member 24 using the above-mentioned method, and thus itis possible to manufacture the liquid immersion member 6 according tothe present embodiment.

In the liquid immersion member 6 of the present embodiment, a regionhaving a ta-C:Ti film formed on the surface thereof has aliquid-repellent property, but at least a portion of the ta-C:Ti filmcan be set to have a lyophilic property in order to hold the liquid LQto form the liquid immersion space LS, and supply and recover the liquidLQ smoothly. Meanwhile, in the present embodiment, the term“liquid-repellent property” indicates that a contact angle when purewater is dropped on the surface exceeds 50 degrees, and the term“lyophilic property” indicates that a contact angle when pure water isdropped on the surface is equal to or less than 50 degrees.

The change of the region having the ta-C:Ti film of the liquid immersionmember 6 formed therein from a liquid-repellent property to a lyophilicproperty can be performed by irradiating a region desired to be set tohave a lyophilic property in the region having the ta-C:Ti film formedtherein, with ultraviolet rays in the atmosphere. When the ta-C:Ti filmis set to have a hydrophilic property, ultraviolet rays having awavelength of 254 nm can be used.

In addition, the hydrophilic property may deteriorate due tocontaminants (resist component or topcoat component) attached to thesurface of the ta-C:Ti film, but the lyophilic property can bereinstated by irradiation with ultraviolet rays.

In this case, ultraviolet rays having a wavelength of 254 nm can also beused.

As described above, according to the liquid immersion member of thepresent embodiment, the ta-C:Ti film is formed in at least a portion ofthe region which comes into contact with the liquid LQ of the liquidimmersion member 6. Thereby, in the region having the ta-C:Ti filmformed therein, even when a chemical affinity with the resist componentor the topcoat component eluted into the adjoining liquid LQ is low, andthe wetting and drying of the liquid LQ are repeated, the adhesion andreprecipitation of the resist component or the topcoat component in theliquid LQ are not likely to occur. Therefore, it is possible toeffectively reduce the number of exposure defects due to thereprecipitation of the resist component or the topcoat component on thesurface of the liquid immersion member 6 in the region which is incontact with the liquid LQ, the peeling-off of the reprecipitates, andthe attachment thereof to the surface of the substrate P duringexposure.

In addition, according to the liquid immersion member of the presentembodiment, since the reprecipitation of the resist component or thetopcoat component on the liquid immersion member 6 is not likely tooccur, it is possible to reduce the frequency of cleaning work of theliquid immersion member 6. In addition, the ta-C:Ti film is formed onthe surface of the liquid immersion member 6. Thereby, even when thereprecipitation of the resist component or the topcoat component iscaused by a repeated exposure process, a low chemical affinity betweenthe surface of the liquid immersion member 6 and the resist component orthe topcoat component can cause these components to be dissolved andwashed by a water flow, and a weak adhesion force therebetween can alsocause the cleaning work time of the reprecipitates to be shortened.Therefore, according to the present embodiment, since the frequency andtime of the cleaning work can be reduced, it is possible to shorten thedowntime of the liquid immersion exposure apparatus, and to reducedeteriorations in productivity.

Further, according to the method of manufacturing the liquid immersionmember of the present embodiment, it is possible to effectively reducethe number of exposure defects, and to provide a liquid immersion membercapable of reducing deteriorations in productivity by reducing thefrequency and time of cleaning work.

Second Embodiment

Next, a second embodiment will be described. In the followingdescription, configuration portions which are the same as or equivalentto those of the above-mentioned embodiment are denoted by the samereference numerals and signs, and thus the description thereof will besimplified or omitted.

FIG. 10 is a cross-sectional side view showing a portion of a liquidimmersion member 6B according to the second embodiment. As shown in FIG.10, the lower surface 7 of the liquid immersion member 6B is constitutedby a first land surface 51, and a second land surface 52 provided on theouter circumference of the first land surface, and the first landsurface 51 and the second land surface 52 are disposed in substantiallythe same plane (are flush with each other). The supply channel 36A isformed by the side plate portion 12 provided facing the outercircumferential surface 14 of the terminal optical element 5, and anouter circumferential surface 57. A recovery port 53 includes thesurface of a mesh member 54, and is disposed so as to face the outercircumferential surface 57 without facing the substrate P. In the liquidimmersion member 6B of the present embodiment, the liquid LQ havingflowed into a void 56 through a first opening 55 formed between thefirst land surface 51 and the second land surface 52 is suctioned andrecovered through the mesh member 54 of the recovery port 53. Meanwhile,in the present embodiment, the liquid immersion member 6B having aconfiguration as disclosed in Japanese Unexamined Patent Application,First Publication No. 2008-182241 may be used.

In the present embodiment, among configuration members of the liquidimmersion member 6B, regions having the ta-C:Ti film formed on thesurfaces thereof include configuration members of regions which comeinto contact with the liquid LQ, as is the case with the firstembodiment. The configuration members are, for example, the recoveryport 53, the mesh member 54, the first land surface 51, the second landsurface 52, and the outer circumferential surface 57. Above all, it ispreferable that the ta-C:Ti film be formed on the second land surface 52which comes into contact with an interface LG of the liquid LQ, and themesh member 54 which is the recovery port 53 that recovers the liquidLQ. Meanwhile, a configuration of the mesh member 54 and a method offorming the ta-C:Ti film on the mesh member 54 are the same as those inthe first embodiment.

In the present embodiment, since the reprecipitation of the resistcomponent or the topcoat component in the liquid LQ can also besuppressed, it is possible to reduce the number of exposure defectscaused by the adhesion of the reprecipitates to the substrate P due tothe peeling-off thereof. In addition, since the frequency of cleaningprocesses can be reduced by suppressing the reprecipitation of theresist component or the topcoat component, it is possible to reducedeteriorations in productivity.

Third Embodiment

Next, a third embodiment will be described. In the followingdescription, configuration portions which are the same as or equivalentto those of the above-mentioned embodiment are denoted by the samereference numerals and signs, and thus the description thereof will besimplified or omitted.

FIG. 11 is a cross-sectional side view showing a portion of a liquidimmersion member 6C according to the third embodiment. As shown in FIG.11, in the liquid immersion member 6C, a supply channel 61H formed by asupply member 61 installed around the terminal optical element 5 isconfigured such that a supply port 62 faces the substrate P. A recoverychannel 63H formed on the outer circumference of the supply member 61 bya recovery member 63 is configured such that a recovery port 64 facesthe substrate P. A trap member 65 is installed on the outercircumference of the recovery member 63. A trap surface 66 is a surface(that is a lower surface) of the trap member 65 which is directed towardthe substrate P side, and is inclined with respect to the horizontalplane as shown in FIG. 6. In the liquid immersion member 6C of thepresent embodiment, the liquid LQ supplied from the supply port 62 tothe substrate P in a substantially vertical direction to the substratesurface is supplied so as to be wet and spread between the lower surface5U of the terminal optical element 5 and the substrate P. In addition,the liquid LQ of the liquid immersion space LS is suctioned andrecovered by the recovery port 64 in a substantially vertical directionfrom the substrate surface. Meanwhile, in the present embodiment, theliquid immersion member 6C having a configuration as disclosed inJapanese Unexamined Patent Application, First Publication No.2005-109426 may be used.

In the present embodiment, among configuration members of the liquidimmersion member 6C, regions having the ta-C:Ti film formed on thesurfaces thereof include configuration members of regions which comeinto contact with the liquid LQ, as is the case with the firstembodiment. The configuration members may be any of the supply member61, the recovery member 63, and the trap member 65 (trap surface 66).

In the present embodiment, since the reprecipitation of the resistcomponent or the topcoat component in the liquid LQ can also besuppressed, it is possible to reduce the number of exposure defectscaused by the adhesion of the reprecipitates to the substrate P due tothe peeling-off thereof. In addition, since the frequency of cleaningprocesses can be reduced by suppressing the reprecipitation of theresist component or the topcoat component, it is possible to reducedeteriorations in productivity.

Fourth Embodiment

Next, a fourth embodiment will be described. In the followingdescription, configuration portions which are the same as or equivalentto those of the above-mentioned embodiment are denoted by the samereference numerals and signs, and thus the description thereof will besimplified or omitted.

FIG. 12 is a cross-sectional side view showing a portion of a liquidimmersion member 6D according to a fourth embodiment. As shown in FIG.12, in the liquid immersion member 6D, a pressure regulating recoverychannel 71A, a pressure regulating supply channel 72A, a supply channel73A, a recovery channel 74A, and an auxiliary recovery channel 75A areformed in this order from the inner circumferential side of the liquidimmersion member 6D toward the outer circumferential side in thevicinity of the terminal optical element 5. On the lower surface 7 ofthe liquid immersion member 6D, a pressure regulating recovery port 71B,a pressure regulating supply port 72B, a supply port 73B, a recoveryport 74B, and an auxiliary recovery port 75B are formed in this orderfrom the inner circumferential side of the liquid immersion member 6Dtoward the outer circumferential side in the vicinity of the terminaloptical element 5 so as to face the substrate P.

In the liquid immersion member 6D of the present embodiment, the liquidLQ supplied from the supply port 73B is wet and spread on the substrateP, to form a liquid immersion region LS. The liquid LQ of the liquidimmersion region LS is suctioned and recovered from the recovery port74B. When the liquid LQ of the liquid immersion region LS on thesubstrate P fails to be recovered in the recovery port 74B, the liquidwhich has not been recovered flows outside the recovery port 74B, butcan be recovered through the auxiliary recovery port 75B. In addition,during the exposure of the substrate P, the liquid LQ of the liquidimmersion space LS is recovered from the pressure regulating recoveryport 71B, or the liquid LQ is supplied from the pressure regulatingsupply port 72B to the liquid immersion space LS, thereby allowing theliquid immersion region LS to be controlled to a desired shape andpressure. Meanwhile, in the present embodiment, the liquid immersionmember 6D having a configuration as disclosed in Japanese UnexaminedPatent Application, First Publication No. 2005-223315 may be used.

In the present embodiment, among configuration members of the liquidimmersion member 6D, regions having the ta-C:Ti film formed on thesurfaces thereof include configuration members disposed in regions whichcome into contact with the liquid LQ, as is the case with the firstembodiment.

In the present embodiment, since the reprecipitation of the resistcomponent or the topcoat component in the liquid LQ can also besuppressed, it is possible to reduce the number of exposure defectscaused by the adhesion of the reprecipitates to the substrate P due tothe peeling-off thereof. In addition, since the frequency of cleaningprocesses can be reduced by suppressing the reprecipitation of theresist component or the topcoat component, it is possible to reducedeteriorations in productivity.

Fifth Embodiment

Next, a fifth embodiment will be described. In the followingdescription, configuration portions which are the same as or equivalentto those of the above-mentioned embodiment are denoted by the samereference numerals and signs, and thus the description thereof will besimplified or omitted.

FIG. 13 is a cross-sectional side view showing a portion of a liquidimmersion member 6E according to the fifth embodiment. As shown in FIG.13, in the liquid immersion member 6E, a gap 81 is defined between awall 82 a and a wall 83 a, and a separation chamber 84 providedcontinuously with the gap 81 is included. The liquid LQ is introducedinto the separation chamber 84 through the gap 81. Liquid and gas areseparated by the separation chamber 84.

A gas recovery path 85 and a liquid recovery path 87 are providedcontinuously with the separation chamber 84. The gas separated by theseparation chamber 84 is recovered from the gas recovery path 85 througha film 86. The separated liquid is recovered from the liquid recoverypath 87.

In the present embodiment, among configuration members of the liquidimmersion member 6E, regions having the ta-C:Ti film formed on thesurfaces thereof include configuration members disposed in regions whichcome into contact with the liquid LQ, as is the case with the firstembodiment.

Particularly, in the present embodiment, it is preferable that a meshmember 89 having the ta-C:Ti film formed therein be disposed in an inletportion of the liquid recovery path 87.

In the present embodiment, since the reprecipitation of the resistcomponent or the topcoat component in the liquid LQ can also besuppressed, it is possible to reduce the number of exposure defectscaused by the adhesion of the reprecipitates to the substrate P due tothe peeling-off thereof. In addition, since the frequency of cleaningprocesses can be reduced by suppressing the reprecipitation of theresist component or the topcoat component, it is possible to reducedeteriorations in productivity.

Sixth Embodiment

Next, a sixth embodiment will be described. In the followingdescription, configuration portions which are the same as or equivalentto those of the above-mentioned embodiment are denoted by the samereference numerals and signs, and thus the description thereof will besimplified or omitted.

FIG. 14 is a cross-sectional side view showing an example of a liquidimmersion member 103 according to the sixth embodiment, FIG. 15 is adiagram when the liquid immersion member 103 is seen from the upper side(+Z side), FIG. 16 is a diagram when the liquid immersion member 103 isseen from the lower side (−Z side), and FIG. 17 is an enlarged viewshowing a portion of FIG. 14.

In the present embodiment, the liquid immersion member 103 includes aplate portion 131 of which at least a portion is disposed so as to facean emission surface 107, a main body portion 132 of which at least aportion is disposed so as to face a lateral side 108F of a terminaloptical element 108, and a channel forming member 133. In the presentembodiment, the plate portion 131 and the main body portion 132 areformed integrally with each other. In the present embodiment, thechannel forming member 133 is different from the plate portion 131 andthe main body portion 132. In the present embodiment, the channelforming member 133 is supported by the main body portion 132. Meanwhile,the channel forming member 133, the plate portion 131 and the main bodyportion 132 may be formed integrally with each other.

Meanwhile, the lateral side 108F is disposed in the vicinity of theemission surface 107. In the present embodiment, the lateral side 108Fis inclined upward toward the outside with respect to a radial directionfor the optical path K. Meanwhile, the radial direction for the opticalpath K includes a radial direction for the optical axis AX of theprojection optical system PL, and includes a direction perpendicular tothe Z-axis.

The liquid immersion member 103 has an opening 115 at a position facingthe emission surface 107. The exposure light EL emitted from theemission surface 107 passes through the opening 115, and the substrate Pcan be irradiated with the exposure light. In the present embodiment,the plate portion 131 includes an upper surface 116A facing at least aportion of the emission surface 107, and a lower surface 116B capable offacing the surface of the substrate P. The opening 115 includes a holewhich is formed so as to link the upper surface 116A to the lowersurface 116B. The upper surface 116A is disposed in the vicinity of theupper end of the opening 115, and the lower surface 116B is disposed inthe vicinity of the lower end of the opening 115.

In the present embodiment, the upper surface 116A is flat. The uppersurface 116A is substantially parallel to the XY plane. Meanwhile, atleast a portion of the upper surface 116A may be inclined with respectto the XY plane, and may include a curved surface. In the presentembodiment, the lower surface 116B is flat. The lower surface 116B issubstantially parallel to the XY plane. Meanwhile, at least a portion ofthe lower surface 116B may be inclined with respect to the XY plane, andmay include a curved surface. The lower surface 116B holds the liquid LQbetween the surface of the substrate P and the lower surface.

As shown in FIG. 16, in the present embodiment, the outer shape of thelower surface 116B is octagonal. Meanwhile, the outer shape of the lowersurface 116B may be an arbitrary polygonal shape such as, for example, aquadrilateral shape or a hexagonal shape. In addition, the outer shapeof the lower surface 116B may be circular, elliptical or the like.

The liquid immersion member 103 includes a supply port 117 capable ofsupplying the liquid LQ, a recovery port 118 capable of recovering theliquid LQ, a recovery channel 119 in which the liquid LQ recovered fromthe recovery port 118 flows, and a discharge portion 120 that separatesand discharges the liquid LQ and gas G of the recovery channel 119.

The supply port 117 can supply the liquid LQ to the optical path K. Inthe present embodiment, the supply port 117 supplies the liquid LQ tothe optical path K in at least a portion of the exposure of thesubstrate P. The supply port 117 is disposed in the vicinity of theoptical path K so as to face the optical path K. In the presentembodiment, the supply port 117 supplies the liquid LQ to a space SRbetween the emission surface 107 and the upper surface 116A. At least aportion of the liquid LQ supplied from the supply port 117 to the spaceSR is supplied to the optical path K, and is supplied onto the substrateP through the opening 115. Meanwhile, at least a portion of at least onesupply port 117 may face the lateral side 108F.

The liquid immersion member 103 includes a supply channel 129 connectedto the supply port 117. At least a portion of the supply channel 129 isformed inside the liquid immersion member 103. In the presentembodiment, the supply port 117 includes an opening formed at one end ofthe supply channel 129. The other end of the supply channel 129 isconnected to a liquid supply device 135 through a channel 134 which isformed by a supply tube 134P.

The liquid supply device 135 can send out the liquid LQ which is cleanedand temperature-regulated. The liquid LQ sent out from the liquid supplydevice 135 is supplied to the supply port 117 through the channel 134and the supply channel 129. The supply port 117 supplies the liquid LQfrom the supply channel 129 to the optical path K (space SR).

The recovery port 118 can recover at least a portion of the liquid LQ onthe substrate P (on the object). The recovery port 118 recovers at leasta portion of the liquid LQ on the substrate P in the exposure of thesubstrate P. The recovery port 118 is directed toward the −Z direction.In at least a portion of the exposure of the substrate P, the surface ofthe substrate P faces the recovery port 118.

In the present embodiment, the liquid immersion member 103 includes afirst member 128 having the recovery port 118. The first member 128includes a first surface 128B, a second surface 128A directed toward adirection different from that of the first surface 128B, and a pluralityof holes 128H that link the first surface 128B to the second surface128A. In the present embodiment, the recovery port 118 includes theholes 128H of the first member 128. In the present embodiment, the firstmember 128 is a mesh member (porous member) having a plurality of holes(openings or pores) 128H. Meanwhile, the first member 128 may be a meshfilter in which numerous small holes are formed in a mesh shape. Thatis, various members having holes capable of recovering the liquid LQ canbe applied to the first member 128.

At least a portion of the recovery channel 119 is formed inside theliquid immersion member 103. In the present embodiment, an opening 132Kis formed at the lower end of the recovery channel 119. The opening 132Kis disposed in at least a portion of the vicinity of the lower surface116B. The opening 132K is formed at the lower end of the main bodyportion 132. The opening 132K is directed downward (−Z direction). Inthe present embodiment, the first member 128 is disposed in the opening132K. The recovery channel 119 includes a space between the main bodyportion 132 and the first member 128.

The first member 128 is disposed in at least a portion of the vicinityof the optical path K (lower surface 116B). In the present embodiment,the first member 128 is disposed in the vicinity of the optical path K.Meanwhile, the annular first member 128 may be disposed in the vicinityof the optical path K (lower surface 116B), and a plurality of firstmembers 128 may be discretely disposed in the vicinity of the opticalpath K (lower surface 116B).

In the present embodiment, the first member 128 is a plate-shapedmember. The first surface 128B is one surface of the first member 128,and the second surface 128A is the other surface of the first member128. In the present embodiment, the first surface 128B faces a space SPon the lower side (−Z direction side) of the liquid immersion member103. The space SP includes, for example, a space between a lower surface114 of the liquid immersion member 103 and a surface of an object (suchas the substrate P) facing the lower surface 114 of the liquid immersionmember 103. When the liquid immersion space LS is formed on the object(such as the substrate P) facing the lower surface 114 of the liquidimmersion member 103, the space SP includes the liquid immersion space(liquid space) LS and a gas space GS.

In the present embodiment, the first member 128 is disposed in theopening 132K so that the first surface 128B faces the space SP and thesecond surface 128A faces the recovery channel 119. In the presentembodiment, the first surface 128B and the second surface 128A aresubstantially parallel to each other. The first member 128 is disposedin the opening 132K so that the second surface 128A is directed towardthe +Z direction and the first surface 128B is directed toward theopposite direction (−Z direction) to the second surface 128A. Inaddition, in the present embodiment, the first member 128 is disposed inthe opening 132K so that the first surface 128B and the second surface128A, and the XY plane are substantially parallel to each other.

In the following description, the first surface 128B may be referred toas the lower surface 128B, and the second surface 128A may be referredto as the upper surface 128A.

Meanwhile, the first member 128 may not be plate-shaped. In addition,the lower surface 128B and the upper surface 128A may be non-parallel toeach other. In addition, at least a portion of the lower surface 128Bmay be inclined with respect to the XY plane, and may include a curvedsurface. In addition, at least a portion of the upper surface 128A maybe inclined with respect to the XY plane, and may include a curvedsurface.

The hole 128H is formed so as to link the lower surface 128B to theupper surface 128A. A fluid (including at least one of the gas G and theliquid LQ) can flow through the hole 128H of the first member 128. Inthe present embodiment, the recovery port 118 includes an opening of thelower end of the hole 128H on the lower surface 128B side. The lowersurface 128B is disposed in the vicinity of the lower end of the hole128H, and the upper surface 128A is disposed in the vicinity of theupper end of the hole 128H.

The recovery channel 119 is connected to the hole 128H (recovery port118) of the first member 128. The first member 128 recovers at least aportion of the liquid LQ on the substrate P (object) facing the lowersurface 128B, from the hole 128H (recovery port 118). The liquid LQrecovered from the hole 128H of the first member 128 flows through therecovery channel 119.

In the present embodiment, the lower surface 114 of the liquid immersionmember 103 includes the lower surface 116B and the lower surface 128B.In the present embodiment, the lower surface 128B is disposed in atleast a portion of the vicinity of the lower surface 116B. In thepresent embodiment, the annular lower surface 128B is disposed in thevicinity of the lower surface 116B. Meanwhile, a plurality of lowersurfaces 128B may be discretely disposed in the vicinity of the lowersurface 116B (optical path K).

In the present embodiment, the first member 128 includes a first portion381 and a second portion 382. In the present embodiment, the secondportion 382 is disposed outside the first portion 381 with respect to aradial direction for the optical path K. In the present embodiment, thesecond portion 382 is configured such that the inflow of the gas G fromthe space SP through the hole 128H to the recovery channel 119 issuppressed further than in the first portion 381. In the presentembodiment, the width of the first portion 381 is smaller than the widthof the second portion 382 with respect to a radial direction for theoptical path K.

In the present embodiment, in the second portion 382, the inflowresistance of the gas G from the space SP through the hole 128H to therecovery channel 119 is greater than in the first portion 381.

The first portion 381 and the second portion 382 have a plurality ofholes 128H, respectively. For example, in a state where the liquidimmersion space LS is formed in the space SP, there is a possibilitythat some of the holes 128H out of the plurality of holes 128H of thefirst portion 381 may come into contact with the liquid LQ of the liquidimmersion space LS, and that some of the holes 128H may not come intocontact with the liquid LQ of the liquid immersion space LS. Inaddition, there is a possibility that some of the holes 128H out of theplurality of holes 128H of the second portion 382 may come into contactwith the liquid LQ of the liquid immersion space LS, and that some ofthe holes 128H may not come into contact with the liquid LQ of theliquid immersion space LS.

In the present embodiment, the first portion 381 can recover the liquidLQ from the hole 128H that comes into contact with the liquid LQ (liquidLQ on the substrate P) of the space SP to the recovery channel 119. Inaddition, the first portion 381 suctions the gas G from the hole 128Hwhich does not come into contact with the liquid LQ to the recoverychannel 119.

That is, the first portion 381 can recover the liquid LQ of the liquidimmersion space LS from the hole 128H facing the liquid immersion spaceLS to the recovery channel 119, and suctions the gas G from the hole128H facing the gas space GS located outside the liquid immersion spaceLS to the recovery channel 119.

In other words, the first portion 381 can recover the liquid LQ of theliquid immersion space LS from the hole 128H facing the liquid immersionspace LS to the recovery channel 119, and suctions the gas G from thehole 128H which does not face the liquid immersion space LS to therecovery channel 119.

That is, when the interface LG of the liquid LQ of the liquid immersionspace LS is present between the first portion 381 and the substrate P,the first portion 381 recovers the liquid LQ to the recovery channel 119together with the gas G. Meanwhile, in the interface LG, both the liquidLQ and the gas G may be suctioned from the hole 128H facing the liquidimmersion space LS and the gas space GS.

The second portion 382 can recover the liquid LQ from the hole 128Hwhich comes into contact with the liquid LQ (liquid LQ on the substrateP) of the space SP to the recovery channel 119. In addition, the secondportion 382 is configured such that the inflow of the gas G from thehole 128H which does not come into contact with the liquid LQ to therecovery channel 119 is suppressed.

That is, the second portion 382 can recover the liquid LQ of the liquidimmersion space LS from the hole 128H facing the liquid immersion spaceLS to the recovery channel 119, and is configured such that the inflowof the gas G from the hole 128H facing the gas space GS located outsidethe liquid immersion space LS to the recovery channel 119 is suppressed.

In the present embodiment, the second portion 382 recovers substantiallyonly the liquid LQ to the recover channel 119, and does not recover thegas G to the recovery channel 119.

In the present embodiment, among configuration members of the liquidimmersion member, regions having the ta-C:Ti film formed on the surfacesthereof include configuration members disposed in regions which comeinto contact with the liquid LQ, as is the case with the firstembodiment.

In the present embodiment, since the reprecipitation of the resistcomponent or the topcoat component in the liquid LQ can also besuppressed, it is possible to reduce the number of exposure defectscaused by the adhesion of the reprecipitates to the substrate P due tothe peeling-off thereof. In addition, since the frequency of cleaningprocesses can be reduced by suppressing the reprecipitation of theresist component or the topcoat component, it is possible to reducedeteriorations in productivity.

Particularly, in the liquid immersion member of the present embodiment,the recovery pressure of liquid is high. The ta-C:Ti film according tothe embodiment of the present invention is used in such a liquidimmersion member, thereby allowing the above-mentioned effect to beexhibited more sufficiently.

Meanwhile, in the each embodiment mentioned above, the optical path onthe emission side (image plane side) of the terminal optical element 5of the projection optical system PL is filled with the liquid LQ.However, as disclosed in, for example, PCT International Publication No.WO2004/019128, it is possible to adopt the projection optical system PLin which the optical path on the incident side (object plane side) ofthe terminal optical element is also filled with the liquid LQ.

Meanwhile, in the each embodiment mentioned above, water is used as theliquid LQ, but liquids other than water may be used.

In addition, in the present embodiment, the ta-C:Ti film is provided onthe surface of the liquid immersion member 6, and is set to have ahydrophilic property by irradiation with ultraviolet rays, but a portionof the liquid immersion member may be set to have a water-repellentproperty. The ta-C:Ti film having a hydrophilic property is provided ina portion which comes into contact with the liquid, and the ta-C:Ti filmhaving a water-repellent property is provided on the outer circumferencethereof, thereby allowing an effect of holding the liquid in the portionhaving a hydrophilic property to be expected. Meanwhile, it is possibleto combine the portion having a water-repellent property with theportion having a hydrophilic property by irradiation with ultravioletrays, in a state where the ta-C:Ti film is formed and then is coveredwith a light-shielding member.

Meanwhile, as the substrate P of each of the present embodimentsmentioned above, not only a semiconductor wafer for a semiconductordevice, but also a glass substrate for a display device, a ceramic waferfor a thin-film magnetic head, or an original plate (synthetic silica,silicon wafer) of a mask or a reticle used in the exposure apparatus andthe like are applied.

The exposure apparatus EX can also be applied to a step-and-repeat typeprojection exposure apparatus (stepper) in which the sequential stepmovement is performed on the substrate P by collectively exposing thepatterns of the mask M in the state where the mask M and the substrate Pare stopped, in addition to a step-and-scan type scanning exposureapparatus (scanning stepper) that scans and exposes the pattern of themask M by synchronously moving the mask M and the substrate P.

Further, in the step-and-repeat type exposure, after a reduced image ofa first pattern is transferred onto the substrate P using the projectionoptical system in the state where the first pattern and the substrate Pare substantially stopped, a reduced image of a second pattern may bepartially overlapped with the first pattern using the projection opticalsystem to perform collective exposure onto the substrate P in the statewhere the second pattern and the substrate P are substantially stopped(stitch-type collective exposure apparatus). In addition, thestitch-type exposure apparatus can also be applied to a step-and-stitchtype exposure apparatus which partially overlaps at least two patternswith each other on the substrate P to transfer them, and sequentiallymoves the substrate P.

In addition, for example, as disclosed in U.S. Pat. No. 6,611,316, thepresent invention can also be applied to an exposure apparatus whichsynthesizes patterns of two masks on the substrate through theprojection optical system, and substantially simultaneouslydouble-exposes one shot region on the substrate by one-time scanningexposure and the like. In addition, the present invention can also beapplied to a proximity-type exposure apparatus, a mirror projectionaligner and the like.

In addition, the exposure apparatus EX may be a twin stage type exposureapparatus which includes a plurality of substrate stages, as disclosedin, for example, U.S. Pat. No. 6,341,007, U.S. Pat. No. 6,208,407, U.S.Pat. No. 6,262,796 and the like. In this case, a recovery channel whichhas a recovery port disposed at the end thereof and which is providedwith a trapping surface may be provided in each of the plurality ofsubstrate stages, and may be provided in some of the substrate stages.

In addition, the exposure apparatus EX may be an exposure apparatuswhich includes a substrate stage that holds a substrate and ameasurement stage in which a reference member having a reference markformed therein and/or various photoelectronic sensors are mounted andwhich does not hold the substrate to be exposed, as disclosed in, forexample, U.S. Pat. No. 6,897,963, United States Patent Application,Publication No. 2007/0,127,006 and the like. In addition, the aboveexposure apparatus can also be applied to an exposure apparatusincluding a plurality of substrate stages and measurement stages. Inthis case, a recovery channel which has a recovery port disposed at theend thereof and which is provided with a trapping surface may bedisposed in the measurement stage.

The type of exposure apparatus EX is also not limited to a semiconductordevice fabrication exposure apparatus that exposes the pattern of asemiconductor device on the substrate P, but can be widely applied to,for example, exposure apparatuses that are used to fabricate liquidcrystal display devices or displays, and exposure apparatuses that areused to manufacture thin film magnetic heads, image capturing devices(CCDs), micromachines, MEMS, DNA chips, reticles or masks, and the like.

Meanwhile, in each of the present embodiments mentioned above, theposition information of each of the stages is measured using aninterferometer system that includes laser interferometers, but thepresent invention is not limited thereto; for example, an encoder systemthat detects a scale (diffraction grating) provided to each of thestages may be used.

Meanwhile, in the embodiments described above, an optically transmissivemask wherein a predetermined light-shielding pattern (or phase patternor dimming pattern) is formed on an optically transmissive substrate isused; however, instead of such a mask, a variable shaped mask (alsocalled an electronic mask, an active mask, or an image generator),wherein a transmissive pattern, a reflective pattern, or a lightemitting pattern is formed based on electronic data of the pattern to beexposed, as disclosed in, for example, U.S. Pat. No. 6,778,257, may beused. In addition, instead of a variable shaped mask that includes anon-emissive type image display device, a pattern forming apparatus thatincludes a self-luminous type image display device may be provided.

In each of the embodiments mentioned above, although the exposureapparatus that includes the projection optical system PL has beendescribed by way of example, the present invention can nevertheless beapplied to an exposure apparatus and an exposing method that do not usethe projection optical system PL. For example, the immersion space canbe formed between an optical member such as a lens and the substrate,and the substrate can be irradiated with the exposure light through theoptical member.

In addition, the present invention can also be applied to an exposureapparatus (lithographic system) that, by forming interference fringes onthe substrate P, exposes the substrate P with a line-and-space pattern,as disclosed in, for example, PCT International Publication No.WO2001/035,168.

The exposure apparatus EX of the above-mentioned embodiments ismanufactured by assembling various subsystems including each componentfalling within the scope of the claims so that predetermined mechanical,electrical, and optical accuracies are maintained. In order to securethese various accuracies, before and after this assembly, adjustment toachieve optical accuracy with respect to various optical systems andadjustment to achieve mechanical accuracy with respect to variousmechanical systems are performed. Processes of assembling the exposureapparatus from various subsystems include the connection of mechanicalcomponents, the wiring and connection of electrical circuits, the pipingand connection of pneumatic circuits, and the like, among varioussubsystems. There is a process of assembling each individual subsystemprior to the process of assembling the exposure apparatus from varioussubsystems. When the process of assembling the exposure apparatus fromthe various subsystems is terminated, a comprehensive adjustment isperformed to ensure the various accuracies of the exposure apparatus asa whole. Meanwhile, it is preferable to manufacture the exposureapparatus in a clean room in which, for example, the temperature and thecleanliness level are controlled.

As shown in FIG. 18, a micro-device such as a semiconductor device ismanufactured by a step 501 of designing functions and performance of themicro-device, a step 502 of fabricating a mask (reticle) on the basis ofthe design step, a step 503 of manufacturing a substrate which is a basematerial of the device, a substrate processing step 504 including a stepof exposing the substrate with exposure light from a pattern of the maskusing the exposure apparatus of the above-mentioned embodiment and astep of developing the exposed substrate, a device assembling step(including manufacturing processes such as dicing, bonding, andpackaging) 505, an inspecting step 506, and the like.

Meanwhile, the features of each of the embodiments mentioned above canbe combined as appropriate. In addition, there may be cases in whichsome of the components are not used. In addition, each disclosure ofevery Japanese Unexamined Patent Application, First Publication andUnited States patent related to the exposure apparatus and the likerecited in each of the embodiments and modified examples described aboveis hereby incorporated by reference in its entirety to the extentpermitted by national laws and regulations.

As an example, in the above-mentioned embodiment, a description has beengiven of the functional film which is applied to the surface of the basematerial used in a state of being immersed in liquid, but the presentinvention is not limited thereto. The functional film of the presentinvention can be applied to the surfaces of various base materials otherthan the base material used in a state of being immersed in liquid.

Specifically, the functional film 308B according to an embodiment of thepresent invention is a functional film applied to the surface of thebase material 308A, and includes a film of Ti-doped tetrahedralamorphous carbon (ta-C:Ti film). In the composition of the film, α,which is defined by the following Expression (3) and which is the atomicratio of Ti to C (Ti/C atomic ratio) is equal to or greater than 0.03and equal to or less than 0.09.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 3} \right\rbrack\mspace{596mu}} & \; \\\begin{matrix}{\alpha = \left( {{Ti}\text{/}C\mspace{14mu}{atomic}\mspace{14mu}{ratio}} \right)} \\{= {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{Ti}\mspace{14mu}{atoms}} \right)/}} \\{\left\{ {\left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{3}\text{-}C\mspace{14mu}{atoms}} \right) + \left( {{number}\mspace{14mu}{of}\mspace{14mu}{sp}^{2}\text{-}C\mspace{14mu}{atoms}} \right)} \right\}}\end{matrix} & (3)\end{matrix}$

here, (number of Ti atoms): number of Ti atoms occupying the film

(number of sp³-C atoms): number of carbon atoms having a sp³ hybridorbital occupying the film

(number of sp²-C atoms): number of carbon atoms having a sp² hybridorbital occupying the film

The thickness of the ta-C:Ti film can be set to be, for example, equalto or greater than 10 nm and equal to or less than 1 μm. Specifically,the thickness of the ta-C:Ti film can be set to be approximately 10, 20,30, 40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900,or 1,000 nm. Meanwhile, the thickness of the ta-C:Ti film is not limitedthereto.

The functional film 308B described above has the characteristics ofbeing chemically stable and being not likely to be contaminated, andthus can be used as not only a liquid immersion member, but also aprotective film of an optical member or the like.

What is claimed is:
 1. A functional film that is applied to a surface ofa base material configured to be immersed in a liquid, the functionalfilm comprising a film of Ti-doped tetrahedral amorphous carbon (ta-C:Tifilm); wherein: an atomic ratio of Ti to C in a composition of the filmis equal to or greater than 0.03 and equal to or less than 0.09; and theatomic ratio of Ti to C is equal to a number of Ti atoms occupying thefilm divided by a sum of a number of carbon atoms having an sp³ hybridorbital and a number of carbon atoms having an sp² hybrid orbitaloccupying the film.
 2. The functional film according to claim 1, whereina static contact angle β of pure water at a surface of the film is equalto or less than 30 degrees.
 3. The functional film according to claim 1,wherein a contamination index γ of a surface of the film which isobtained through comparison with a surface of pure Ti is equal to orless than 80%.
 4. The functional film according to claim 1, wherein thebase material is formed of Ti.
 5. The functional film according to claim4, wherein: the base material is formed of Ti; a proportion of carbonatoms having an sp³ hybrid orbital occupying the film is equal to orless than 59%; and the proportion is equal to a number of carbon atomshaving an sp³ hybrid orbital divided by a sum of a number of carbonatoms having an sp³ hybrid orbital, a number of carbon atoms having ansp² hybrid orbital, and a number of Ti atoms occupying the film.
 6. Thefunctional film according to claim 1, wherein a thickness of the film isequal to or greater than 10 nm and equal to or less than 1 μm.
 7. Aliquid immersion member having a liquid immersion space formed thereinin a state where liquid is held between an object and the liquidimmersion member so that an optical path of exposure light with whichthe object is irradiated is filled with the liquid, wherein the liquidimmersion member is constituted of comprises the base material coveredwith the functional film according to claim 1, and the base material hasa mesh shape.
 8. An exposure apparatus that exposes a substrate usingexposure light through liquid, the exposure apparatus comprising theliquid immersion member according to claim
 7. 9. The exposure apparatusaccording to claim 8, wherein the liquid immersion member is included ina portion of a liquid recovery mechanism that recovers liquid.
 10. Adevice manufacturing method comprising: a step of exposing a substrateusing the exposure apparatus according to claim 8, and a step ofdeveloping the exposed substrate.